Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-04-04
1998-09-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 95, 257 96, 257 97, 257 98, 372 48, 372 49, 372 50, 372 99, H01L 3300
Patent
active
058014039
ABSTRACT:
The cavity of a laser diode is made longer than that which would be dictated by consideration of maximizing the efficiency of the diode. The lateral divergence of the emitted light beam is decreased as the cavity length increases. The lower lateral divergence enables the emitted light beam being focused to produce a greater depth of field for coupling into an optical fiber. In another case, when the fiber size is fixed, lower lateral divergence enables the emitted light beam to being fed into a lower numerical aperture fiber, or enables the beam divergence after fiber to be lower.
REFERENCES:
patent: 4028146 (1977-06-01), Logan et al.
patent: 4176325 (1979-11-01), Kajimura et al.
patent: 4958357 (1990-09-01), Kinoshita
patent: 5260963 (1993-11-01), Baird et al.
patent: 5317588 (1994-05-01), Kahen
patent: 5515394 (1996-05-01), Zhang
patent: 5663979 (1997-09-01), Marshall
Mintel William
Opto Power Corporation
Shapiro Herbert M.
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