Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-04-19
2005-04-19
Leung, Quyen (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046012
Reexamination Certificate
active
06882670
ABSTRACT:
A diode laser formed by a plurality of layers including n-type layers and p-type layers, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction so as to generate an optical field distribution with a larger fraction in n-type layers than in p-type layers, and configured to generate a beam with a divergence of less than about 28° in the growth direction. The layers include an active layer for generating the optical field, a trap layer for attracting the optical field, and a separation layer between the active layer and the trap layer for repelling the optical field. The laser can be configured to have an internal loss of about 1.2 cm−1or less, and to generate a laser beam with a spot size of at least about 1.1 μm and a divergence of approximately 13° in the growth direction. If the length of the laser is at least about 1 mm, the threshold current density of the laser can be less than about 400 A cm−2.
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Aggett Michael Francis
Buda Manuela
Jagadish Chennupati
Tan Hark Hoe
Knobbe Martens Olson & Bear LLP
Leung Quyen
The Australian National University
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