Low distortion switch

Details Low distortion switch Low distortion switch

1995-08-11

1998-06-30

Pham, Chi H.

Gas: heating and illuminating

485 82, 485 83, 333103, H04B 144

Patent

active

057747920

ABSTRACT:
This invention is intended to realize a high frequency switch with a low distortion characteristic. In an SPDT switch consisting of a plurality of FETs, the FET on the receiver side through which a received signal passes and the shunt FET on the transmitter side are each formed of series-connected FETs, and a capacitor is connected between the first gate and the source and between the second gate and the drain. An inductance is connected in parallel with a series connection of FETs. This easily realizes a high frequency switch having a low voltage and a low distortion characteristic. The 1 dB compression level, an index of input-output characteristic, can be improved more than 5 dB over the conventional SPDT switch at an input level.

REFERENCES:
patent: 4962050 (1990-10-01), Geissberger et al.
patent: 5193218 (1993-03-01), Shimo
patent: 5436553 (1995-07-01), Pepper et al.
patent: 5507011 (1996-04-01), Chigodo et al.
patent: 5519349 (1996-05-01), Nakahara
patent: 5548239 (1996-08-01), Kohama

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