Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-20
2005-09-20
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S098000, C372S045013
Reexamination Certificate
active
06946674
ABSTRACT:
A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric, or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric. The periodic nanostructure is selected from a periodic structure formed by vapor-deposition or etching of fine metallic wires, a periodic structure of a film formed on surfaces with atomic steps, or a periodic structure self-organized during epitaxial growth or polymerization of an organic molecule or polymer.
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Jackson Jerome
Japan Science and Technology Corporation
The Webb Law Firm
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