Low-dielectric constant structure with a multilayer stack of...

Details Low-dielectric constant structure with a multilayer stack of... Low-dielectric constant structure with a multilayer stack of...

2007-03-27

2007-03-27

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S637000, C257S758000

Reexamination Certificate

active

10022456

ABSTRACT:
The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.

REFERENCES:
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5561318 (1996-10-01), Gnade et al.
patent: 5569058 (1996-10-01), Gnade et al.

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