Low-dielectric constant structure with a multilayer stack of...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S638000, C257S642000, C257S632000, C257S637000, C257S643000, C438S725000, C438S622000, C438S624000, C438S706000

Reexamination Certificate

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07034380

ABSTRACT:
The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.

REFERENCES:
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5561318 (1996-10-01), Gnade et al.
patent: 2002/0076543 (2002-06-01), Sikonia
patent: 2002/0172766 (2002-11-01), Laxman et al.

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