Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-04-25
2006-04-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S638000, C257S642000, C257S632000, C257S637000, C257S643000, C438S725000, C438S622000, C438S624000, C438S706000
Reexamination Certificate
active
07034380
ABSTRACT:
The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.
REFERENCES:
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5561318 (1996-10-01), Gnade et al.
patent: 2002/0076543 (2002-06-01), Sikonia
patent: 2002/0172766 (2002-11-01), Laxman et al.
Chen George
Erdem Fazli
Flynn Nathan J.
Intel Corporation
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