Low dielectric constant polyorganosilicon materials...

Details Low dielectric constant polyorganosilicon materials... Low dielectric constant polyorganosilicon materials...

2005-01-11

2005-01-11

Peng, Kuo-Liang (Department: 1712)

Stock material or miscellaneous articles

Composite

Of silicon containing

C427S387000

Reexamination Certificate

active

06841256

ABSTRACT:
Methods are presented herein for forming thermally stable, adhesive, low dielectric constant polyorganosilicon dielectric films for use as semiconductor insulators and as adhesion promoters as and in conjunction with low k materials. Surprisingly, the methods described herein can provide polyorganosilicon materials, coatings and films having very low dielectric constants that are generated from specified polycarbosilane starting materials employing wet coating and standard high energy generating processes, without the need for exotic production techniques or incurring disadvantages found in other low k dielectric film-forming methods. The polycarbosilane compounds, polyorganosilane compounds, adhesion promoter materials and layered materials disclosed herein can be used in any suitable semiconductor or electronic application, including semiconductor devices, electronic devices, films and coatings.

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Shu Seki, et al. entitled, “Positive-Negative Inversion of Silicon Based Resist Materials: Poly (di-n-hexylsilane) for Ion Beam Irradiation” dated Aug. 8, 1997 pp. 5361-5364.

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