Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1997-10-24
2000-04-18
Pianalto, Bernard
Stock material or miscellaneous articles
Composite
Of silicon containing
42725529, 4272556, 427294, 427489, 427490, 427578, 428421, B32B 904
Patent
active
060513217
ABSTRACT:
Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 .mu.m ICs, or when copper is used as conductor in future ICs.
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Foggiato Giovanni Antonio
Lee Chung J.
Wang Hui
Pianalto Bernard
Quester Technology, Inc.
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