Compositions – Fluent dielectric – B- – p- – s- – se- – or te-containing
Reexamination Certificate
2006-04-18
2006-04-18
Gupta, Vogendra N (Department: 1751)
Compositions
Fluent dielectric
B-, p-, s-, se-, or te-containing
C252S570000, C252S575000, C428S411100, C428S414000, C438S778000, C257S758000
Reexamination Certificate
active
07029605
ABSTRACT:
There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
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Mikami Noboru
Nobutoki Hideharu
Tsunoda Sei
Gupta Vogendra N
Vijayakumar Kallambella
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