Low dielectric constant material and method of application to is

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257759, 438624, H01L 2348, H01L 2352, H01L 2940

Patent

active

061664391

ABSTRACT:
A semiconductor device which includes a substrate and a conductive pattern formed on the substrate. The conductive pattern includes at least two conductive lines adjacent one another. A low dielectric constant (LDC) material is dispersed between the at least two conductive lines. The LDC material includes a polymeric material including a polymer having a first and second end. The first end includes a functional group adapted to substantially bond to an insulating layer covering at least a portion of the substrate. The second end includes a functional group adapted to substantially bond to a dielectric material deposited over the LDC material. The polymeric material also includes air pockets therein which facilitate mitigation of capacitive crosstalk between the at least two conductive lines.

REFERENCES:
patent: 4618541 (1986-10-01), Forouhi et al.
patent: 5079600 (1992-01-01), Schnur et al.
patent: 5116459 (1992-05-01), Kordus et al.
patent: 5177588 (1993-01-01), Ii et al.
patent: 5186745 (1993-02-01), Maniar
patent: 5219669 (1993-06-01), Chang et al.
patent: 5407866 (1995-04-01), Sellers
patent: 5453642 (1995-09-01), Kaja et al.
patent: 5549786 (1996-08-01), Jones et al.
patent: 5578226 (1996-11-01), Chan et al.
patent: 5594080 (1997-01-01), Waymouth et al.
patent: 5641712 (1997-06-01), Grivna
patent: 5665657 (1997-09-01), Lee
patent: 5767014 (1998-06-01), Hawker et al.
patent: 5783481 (1998-07-01), Brennan et al.
patent: 5792705 (1998-08-01), Wang et al.
patent: 5883219 (1999-03-01), Carter et al.
patent: 5886410 (1999-03-01), Chiang et al.
patent: 5889330 (1999-03-01), Nishimuira et al.
patent: 5923074 (1999-07-01), Jeng
patent: 5924005 (1999-07-01), Waldo
"Thin Hyperbranched Films Grafted to Gold, Silicon and Aluminum", by David E. Bergbreiter et al.; Department of Chemistry, Texas A&M University, pp. 943-944.
Abstract No. 928; "Hyperbranched Polymer films Containing Fluorescent, Hydropobic, Metal-ion Binding and Electroactive Functionalities ", by Merlin L. Bruening et al.; Department of Chemistry, Texas A&M University, pp. 1138.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low dielectric constant material and method of application to is does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low dielectric constant material and method of application to is, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low dielectric constant material and method of application to is will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-998121

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.