Low dielectric constant layers

Details Low dielectric constant layers Low dielectric constant layers

2005-11-08

2005-11-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S632000, C257S642000

Reexamination Certificate

active

06963137

ABSTRACT:
This invention relates to low dielectric constant layers formed on the substrate having:(a) a base zone, adjacent the substrate, having pores distributed therein, at least the majority of the pores having diameters in the range 1 to 10 nm;(b) an atomically smooth surface zone, spaced from the substrate; and(c) an intermediate zone having pores distributed therein, at least the majority of the pores having diameters equal to or less than 2 nm so that there is a general reduction in pore size from the bottom of the layer towards the top.

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patent: 6465365 (2002-10-01), Annapragada
patent: 6593251 (2003-07-01), Baklanov et al.
patent: 6800928 (2004-10-01), Lee et al.
patent: 0 687 004 (1995-12-01), None
patent: 0 881 678 (1998-12-01), None
patent: 881678 (1998-12-01), None
patent: WO 98/50945 (1998-11-01), None

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