Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-08-02
2005-08-02
Kielin, Erik (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S759000, C438S623000, C438S780000, C438S781000, C528S007000
Reexamination Certificate
active
06924545
ABSTRACT:
A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).
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“Evaluation of Low-k Polymer Film Containing Borazine-Unit”, by U. Yuko et al., Extended Abstracts (The 62nd Autumn Meeting, 2001) ; The Japan Society of Applied Physics and Related Societies, Sep. 11-14, 2001, p. 656.
Inoue Masami
Uchimaru Yuko
Birch & Stewart Kolasch & Birch, LLP
Kielin Erik
National Institute of Advanced Industrial Science
Technology Mitsubishi Denki Kabushiki Kaisha
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