Low dielectric constant insulation layer for integrated circuit

Details Low dielectric constant insulation layer for integrated circuit Low dielectric constant insulation layer for integrated circuit

1996-08-13

1999-01-26

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257635, 257637, 257641, 257644, 257650, 501 971, 501127, 501133, H01L 2358, H01L 2906, C04B 3558, C04B 3503

Patent

active

058641726

ABSTRACT:
A low dielectric insulation layer for an integrated circuit structure material, and a method of making same, are disclosed. The low dielectric constant insulation layer comprises a porous insulation layer, preferably sandwiched between non-porous upper and lower insulation layers. The presence of some gases such as air or an inert gas, or a vacuum, in the porous insulation material reduces the overall dielectric constant of the insulation material, thereby effectively reducing the capacitance of the structure. The porous insulation layer is formed by a chemical vapor deposition of a mixture of the insulation material and a second extractable material; and then subsequently selectively removing the second extractable material, thereby leaving behind a porous matrix of the insulation material, comprising the low dielectric constant insulation layer.

REFERENCES:
patent: 3615941 (1971-10-01), Yamada et al.
patent: 3853496 (1974-12-01), Kim
patent: 3878131 (1975-04-01), Hayes
patent: 3951782 (1976-04-01), Buss
patent: 4242791 (1981-01-01), Horng et al.
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4368573 (1983-01-01), deBrebisson et al.
patent: 4445267 (1984-05-01), De La Moneda et al.
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4490737 (1984-12-01), Pierce et al.
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4795722 (1989-01-01), Welch et al.
patent: 4902650 (1990-02-01), Caldwell et al.
patent: 4931354 (1990-06-01), Wakino et al.
patent: 4972251 (1990-11-01), Lehrer
patent: 5103288 (1992-04-01), Sakamota et al.
patent: 5254497 (1993-10-01), Liu
patent: 5278103 (1994-01-01), Mallon et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5598026 (1997-01-01), Kapoor et al.
Ghandhi, Sorab K., VLSI Fabrication Principles Silicon and Gallium Arsenide, New York: John Wiley & Sons, 1983, pp. 517-520.
Liu, W.S., et al., "Instability of a Ge.sub.x Si.sub.1-x O.sub.2 Film on a Ge.sub.x Si.sub.1-x Layer", Journal of Applied Physics, vol. 72, No. 9, Nov. 1, 1992, pp. 4444-4446.
Wolf, Stanley, et al., Silicon Processing for the VLSI Era, vol 1: Process Technology, Sunset Beach, California: Lattice Press, 1986, 225-226.

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