Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2004-03-26
2008-09-23
Zimmer, Marc S (Department: 1796)
Stock material or miscellaneous articles
Composite
Of silicon containing
C528S004000, C528S007000, C528S025000, C528S031000, C528S037000
Reexamination Certificate
active
07427443
ABSTRACT:
The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.
REFERENCES:
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patent: 2003-119289 (2003-04-01), None
“Evaluation of Low-k Polymer Film containing Borazine Unit” authored by Uchimaru et al. and published in Extended Abstracts (the 62nd Autumn Meeting, 2001); The Japan Society of Applied Physics and Related Societies, Sep. 11-14, 2001, p. 656.
“Borazine-Siloxane Polymer and it's Application” authored by Inoue et al. and published in the Proceedings of the Symposium on Semiconductors and Integrated Circuits Technology, 2002, 63, p. 96-101.
International Technology Roadmap for Semiconductors 2002 Update, 2002 Update Tables, p. 75, “Table 62A MPU Interconnect Technology Requirements—Near-Term”, 2002.
S. Shinmiyahara, et al., Cu-Interconnect Technology, p. 227, “Latest Development of Cu Wiring Techniques”, (with partial English translation), May 30, 1998.
Inoue Masami
Uchimaru Yuko
National Institute of Advanced Industrial Science and Technology
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Zimmer Marc S
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