Low dielectric constant insulating film and method of...

Details Low dielectric constant insulating film and method of... Low dielectric constant insulating film and method of...

2006-11-07

2006-11-07

Peng, Kuo-Liang (Department: 1712)

Stock material or miscellaneous articles

Composite

Of silicon containing

C427S155000

Reexamination Certificate

active

07132171

ABSTRACT:
The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3groups from Si—CH3bond in the insulating film; and (c) ejecting the broken CH3groups from the insulating film.

REFERENCES:
patent: 6420441 (2002-07-01), Allen et al.
patent: 2002/0182845 (2002-12-01), Miyano et al.
patent: 2003/0024103 (2003-02-01), Kiguchi et al.
patent: 2000-273176 (2000-10-01), None
patent: 2002-359241 (2002-12-01), None

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