Low dielectric constant fluorine-doped silica glass film for...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S635000, C257S650000

Reexamination Certificate

active

06844612

ABSTRACT:
A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.

REFERENCES:
patent: 5763010 (1998-06-01), Guo et al.
patent: 6440852 (2002-08-01), Meder et al.
patent: 6506690 (2003-01-01), Lobbins

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