Low dielectric constant composite film for integrated circuits o

Details Low dielectric constant composite film for integrated circuits o Low dielectric constant composite film for integrated circuits o

1998-04-17

2000-07-11

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, H01L 23485

Patent

active

060877294

ABSTRACT:
An insulating film between stacked electrically conducting layers through which interconnections of integrated circuits are realized, is formed of an aerogel of an inorganic oxide on which organic monomers have been grafted under inert ion bombardment and successively further incorporated in the aerogel to fill at least partially the porosities of the inorganic aerogel. The composite dielectric material is thermally stable and has a satisfactory thermal budget. The method of forming an aerogel film includes the spinning of a precursor compound solution onto the wafer followed by supercritical solvent extraction carried out in the spinning chamber.

REFERENCES:
patent: 5523615 (1996-06-01), Cho et al.
patent: 5661344 (1997-08-01), Havemann et al.
patent: 5789819 (1998-08-01), Gnade et al.
patent: 5942802 (1999-08-01), Aoi
Hrubesh et al., "Dielectric Properties and Electronic Applications of Aerogels", Chemical Abstracts, vol. 123, No. 10, Sep. 4, 1995, Abstract No. 129392s, p. 1279.

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