Low dielectric constant amorphous fluorinated carbon and method

Details Low dielectric constant amorphous fluorinated carbon and method Low dielectric constant amorphous fluorinated carbon and method

1997-11-19

1999-08-31

Turner, Archene

Coating processes

Electrical product produced

Carbon coating

427249, L23C 1600

Patent

active

059451556

ABSTRACT:
An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

REFERENCES:
patent: 5073785 (1991-12-01), Jansen et al.
patent: 5238705 (1993-08-01), Hayashi et al.
patent: 5256483 (1993-10-01), Yamazaki et al.
patent: 5391409 (1995-02-01), Shibata et al.
patent: 5616372 (1997-04-01), Conley et al.

Affiliated with

Also associated with

Rating

Low dielectric constant amorphous fluorinated carbon and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low dielectric constant amorphous fluorinated carbon and method , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low dielectric constant amorphous fluorinated carbon and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2425993