Low dielectric constant amorphous fluorinated carbon and method

Details Low dielectric constant amorphous fluorinated carbon and method Low dielectric constant amorphous fluorinated carbon and method

1996-02-29

1999-08-24

Turner, Archene

Stock material or miscellaneous articles

Self-sustaining carbon mass or layer with impregnant or...

428195, B32B 900

Patent

active

059423285

ABSTRACT:
An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

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