Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2001-01-03
2002-11-12
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S072000, C438S636000
Reexamination Certificate
active
06479879
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates generally to semiconductor devices and manufacturing processes, and more particularly, to formation of a bottom antireflective coating (BARC) in a semiconductor structure.
2. Discussion of the Related Art
In semiconductor technology it is well-known to provide a bottom antireflective coating (BARC) on a surface beneath a layer of photoresist, to aid in the patterning of images. The BARC cuts down on light scattering into the resist, which helps in defining images. The BARC also minimizes standing waves effects and improves image contrast.
In order to achieve these advantages, the BARC must be relatively defect free. Such a uniform BARC would provide a more uniform reflectivity, in turn leading to better photolithographic pattern resolution.
Using a normal spinon technique to apply a BARC on a substrate can result in numerous defects therein in the form of variations in thickness, leading to the problems described above.
Therefore, what is needed is a method for forming a low defect BARC layer, so that manufacturing efficiency is increased.
SUMMARY OF THE INVENTION
In the present method, rather than applying a BARC directly onto a substrate, a primer, for example, vapor deposited hexamethyldisilazane (HMDS) along with a small amount of trimethylsilyldiethylamine (TMSDEA) as an additive, is vapor deposited on the substrate, and the BARC is formed on the primer. Then a layer of photoresist may be formed over the BARC. The inclusion of the primer layer results in a low defect BARC, in fact eliminating defects due to variations in thickness, so that the BARC provide uniform reflectivity to in turn provide improved photolithographic pattern resolution
The present invention is better understood upon consideration of the detailed description below, in conjunction with the accompanying drawings. As will become readily apparent to those Gilled in the art from the following description, there is shown and described an embodiment of this invention simply by way of the illustration of the best mode to carry out the invention. As will be realized, the invention is capable of other embodiments and its several details are capable of modifications and various obvious as, all without departing from the scope of the invention. Accordingly, the drawings and detailed description will be regarded as illustrative in nature and not as restrictive.
REFERENCES:
patent: 5077085 (1991-12-01), Schnur et al.
patent: 5079600 (1992-01-01), Schnur et al.
patent: 5208067 (1993-05-01), Jones et al.
patent: 5401316 (1995-03-01), Shiraishi et al.
patent: 5407529 (1995-04-01), Homma
patent: 5702767 (1997-12-01), Peterson et al.
patent: 5736773 (1998-04-01), Schmid
patent: 5858621 (1999-01-01), Yu et al.
patent: 5886391 (1999-03-01), Niroomand et al.
patent: 6057587 (2000-05-01), Ghandehari et al.
patent: 6106995 (2000-08-01), Dixit et al.
patent: 6107177 (2000-08-01), Lu et al.
patent: 6165684 (2000-12-01), Mizutani et al.
patent: 6323139 (2001-11-01), Moore et al.
patent: 6354620 (2002-03-01), Budden et al.
Nickel Alexander H.
Pike Christopher Lee
Advanced Micro Devices , Inc.
Huynh Andy
Nelms David
LandOfFree
Low defect organic BARC coating in a semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low defect organic BARC coating in a semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low defect organic BARC coating in a semiconductor structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2924849