Low defect density, ideal oxygen precipitating silicon

Details Low defect density, ideal oxygen precipitating silicon Low defect density, ideal oxygen precipitating silicon

2007-06-12

2007-06-12

Lam, Cathy (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S064100, C117S932000

Reexamination Certificate

active

11058996

ABSTRACT:
The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.

REFERENCES:
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4376657 (1983-03-01), Nagasawa et al.
patent: 4437922 (1984-03-01), Bishoff et al.
patent: 4505759 (1985-03-01), O'Mara
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
patent: 4868133 (1989-09-01), Huber
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5267189 (1993-11-01), Yamashita et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5401669 (1995-03-01), Falster et al.
patent: 5403406 (1995-04-01), Falster et al.
patent: 5445975 (1995-08-01), Gardner et al.
patent: 5474020 (1995-12-01), Bell et al.
patent: 5478408 (1995-12-01), Mitani et al.
patent: 5485803 (1996-01-01), Habu
patent: 5487354 (1996-01-01), von Ammon et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5502331 (1996-03-01), Inoue et al.
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5539245 (1996-07-01), Imura et al.
patent: 5548654 (1996-08-01), Tobin
patent: 5561316 (1996-10-01), Fellner
patent: 5593494 (1997-01-01), Falster
patent: 5611855 (1997-03-01), Wijaranakula
patent: 5667584 (1997-09-01), Takano et al.
patent: 5674756 (1997-10-01), Satoh et al.
patent: 5704973 (1998-01-01), Sakurada et al.
patent: 5728211 (1998-03-01), Takano et al.
patent: 5738942 (1998-04-01), Kubota et al.
patent: 5779791 (1998-07-01), Korb et al.
patent: 5788763 (1998-08-01), Hayashi et al.
patent: 5885905 (1999-03-01), Nadahara et al.
patent: 5919302 (1999-07-01), Falster et al.
patent: 5935320 (1999-08-01), Graef et al.
patent: 5939770 (1999-08-01), Kageyama
patent: 5944889 (1999-08-01), Park et al.
patent: 5954873 (1999-09-01), Hourai et al.
patent: 5968262 (1999-10-01), Saishouji et al.
patent: 5968264 (1999-10-01), Lida et al.
patent: 6045610 (2000-04-01), Park et al.
patent: 6146459 (2000-11-01), Park
patent: 6153008 (2000-11-01), Von Ammon et al.
patent: 6251184 (2001-06-01), Park
patent: 6287380 (2001-09-01), Falster et al.
patent: 6340392 (2002-01-01), Park
patent: 6409827 (2002-06-01), Falster et al.
patent: 6409833 (2002-06-01), Park
patent: 6472040 (2002-10-01), Park et al.
patent: 6503594 (2003-01-01), Park
patent: 6676753 (2004-01-01), Park
patent: 6821344 (2004-11-01), Park
patent: 85100856 (1986-07-01), None
patent: 155 531 (1982-06-01), None
patent: 39 05 626 (1989-08-01), None
patent: 4323964 (1994-01-01), None
patent: 4414947 (1995-08-01), None
patent: 19806045 (1998-08-01), None
patent: 0503816 (1992-09-01), None
patent: 0504837 (1992-09-01), None
patent: 0536958 (1993-04-01), None
patent: 0716168 (1996-06-01), None
patent: 0799913 (1998-12-01), None
patent: 0 962 556 (1999-08-01), None
patent: 0962557 (1999-08-01), None
patent: 0 954 018 (1999-11-01), None
patent: 0 964 435 (1999-12-01), None
patent: 2 137 524 (1984-10-01), None
patent: 2182262 (1986-10-01), None
patent: 2-32535 (1988-02-01), None
patent: 1-242500 (1989-09-01), None
patent: 2-180789 (1990-07-01), None
patent: HEI 2-267195 (1990-10-01), None
patent: 3-9078 (1991-02-01), None
patent: HEI 3-93700 (1991-04-01), None
patent: 3-185831 (1991-08-01), None
patent: HEI 4-042893 (1992-02-01), None
patent: 4-108682 (1992-04-01), None
patent: 4-294540 (1992-10-01), None
patent: 5-155700 (1993-06-01), None
patent: 7/158458 (1995-05-01), None
patent: 7-201874 (1995-08-01), None
patent: HEI 7-206591 (1995-08-01), None
patent: 7/321120 (1995-12-01), None
patent: 7/335657 (1995-12-01), None
patent: HEI 8-012493 (1996-01-01), None
patent: 8/045944 (1996-02-01), None
patent: 8/045945 (1996-02-01), None
patent: 8/045947 (1996-02-01), None
patent: HEI 8-208374 (1996-08-01), None
patent: 8/268794 (1996-10-01), None
patent: HEI 8-330316 (1996-12-01), None
patent: 9-199416 (1997-07-01), None
patent: 9/202690 (1997-08-01), None
patent: 11-067781 (1999-03-01), None
patent: 11-150119 (1999-06-01), None
patent: 11-157995 (1999-06-01), None
patent: 11-180800 (1999-07-01), None
patent: 11-189495 (1999-07-01), None
patent: 11-199386 (1999-07-01), None
patent: 11-199387 (1999-07-01), None
patent: 1997-0003671 (1997-01-01), None
patent: WO 97/26393 (1997-07-01), None
patent: WO 98/38675 (1998-09-01), None
patent: WO 98/45507 (1998-10-01), None
patent: WO 98/45508 (1998-10-01), None
patent: WO 98/45509 (1998-10-01), None
patent: WO 98/45510 (1998-10-01), None
“Axial Temperature Gradient of Silicon Crystals During Czochralski Growth”, Journal of Crystal Growth, vol. 151, pp. 273-277, 1995.
Abe, T., “Innovated Silicon Crystal Growth and Wafering Technologies” Electrochemical Society Proceedings, vol. 97, No. 3, pp. 123-133.
Abe, T., et al., “Defect-Free Surfaces of Bulk Wafers by Combination of RTA and Crystal Growth Conditions”.
Abe, T., et al., “Swirl Defects in Float-Zoned Silicon Crystals,” Physics., vol. 116B, pp. 139-147, 1985.
Abe, T., et al., “The Characteristics of Nitrogen in Silicon Crystals,” VLSI Science and Technology/1985, (Electrochem. Soc. Pennington, 1985), Proceedings vol. 85-5, pp. 543-551, 1985.
Abe, T., et al., “Behavior of Point Defects in FZ Silicon Crystals”, Semiconductor Silicon 1990,Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology,vol. 90-7, pp. 105-116, 1990.
Abe, T., et al., “Dynamic Behavior of Intrinsic Point Defects in FZ and CZ Silicon Crystals,” Mat. Res. Soc. Symp. Proc., vol. 262, pp. 3-13, 1992.
Borionetti, G., et al., “Investigation of Low Density Defects in Czochralski Silicon Crystals: Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity,” Electrochemical Society Proceedings, vol. 96-13, pp. 160-169.
Chiou, H.D., “The Effects of Preheatings on Axial Oxygen Precipitation Uniformity in Czochralski Silicon Crystals”,J. Electrochem. Soc.,vol. 139, No. 6, Jun. 1992.
de Kock, A.J.R., “Microdefects in Swirl-Free Silicon Crystals,” pp. 83-94 (source unknown) (date unknown).
de Kock, A.J.R., “The Elimination of Vacancy-Cluster Formation in Dislocation -Free Silicon Crystals”, J. of the Electrochem. Soc.: Solid-State Science and Technology, vol. 118, No. 11, pp. 1851-1856, 1971.
de Kock, A.J.R., et al., “Effect of Growth Parameters on Formation and Elimination of Vacancy Clusters in Dislocation-Free Silicon Crystals”, Journal of Crystal Growth, vol. 22, pp. 311-320, 1974.
de Kock, A.J.R., “Point Defect Condensation in Dislocation-Free Silicon Crystals,” Semiconductor Silicon, pp. 508-520, 1977.
de Kock, A.J.R., et al., “The Effect of Doping on the Formation of Swirl Defects in Dislocation-Free Czochralski-Grown Silicon Crystals”, Journal of Crystal Growth, vol. 49, pp. 718-734, 1980.
Dornberger, E., et al., “Simulation of Grown-in Voids in Czochralski Silicon Crystals”, Electrochemical Society Proceedings, vol. 97, No. 22 pp. 40-49.
Dornberger, E., et al., “The Impact of Dwell Time Above 900° C. During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers”, Electrochemical Society Proceedings, vol. 96-13, pp. 140-151.
Dornberger, E., et al., “The Dependence Ring Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Dilicon Crystals”, Electrochemical Society Proceedings, vol. 95-4, pp. 294-305, 1995.
Dornberger, E. et al., “Simulation of Non-Uniform Grown-in Void Distributions in Czochralski Silicon Crystals”, Electrochemical Society Proceedings, vol. 98-1, pp. 490-503, 1998.
Eidenzon, A.M. et al., “Microdefects in Dislocation-Free Silicon Monocrystals, ”TSVAM Met., No. 3 pp. 64-67, 1984.
Eidenzon, A.M., et al., &#

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