Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-06
2005-09-06
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S448000, C257S081000
Reexamination Certificate
active
06940142
ABSTRACT:
The signal-to-noise ratio of amorphous silicon (a-Si:H) image sensor arrays is limited by electronic noise, which is largely due to data line capacitance. To reduce data line capacitance, an air-gap (i.e., vacuum or gas-filled space) is produced at crossover points separating the data lines and gate lines. This air-gap crossover structure is formed by depositing a release material on the gate lines, forming the data lines on the release material, and then removing (etching) the release material such that the data lines form an arch extending over the gate lines. A dielectric material is then applied to strengthen the data line, and the sensor pixels are then formed.
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Mei Ping
Rahn Jeffrey T.
Street Robert A.
Bever Patrick T.
Bever Hoffman & Harms LLP
Richards N. Drew
Thomas Tom
Xerox Corporation
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