Low dark current photodetector

Details Low dark current photodetector Low dark current photodetector

1997-01-29

1999-03-09

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257189, 257459, 257466, H01L 2906, H01L 3100, H01L 310328, H01L 310336

Patent

active

058804820

ABSTRACT:
A low dark current metal-semiconductor-metal photodetector has an active region for receiving photons and generating charge carriers in the form of holes and electrons in response to the photons and an isolation region for allowing electrical coupling to occur without increasing the dark current. The photodetector is a III-V ternary semiconductor having its active region defined by a via through a dielectric layer. A pair of electrodes has contact portions extending into contact with the active region and terminating on the isolation region. One electrode of the pair provides a high Schottky barrier to holes. The other electrode provides a high Schottky barrier for electrons

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