Low dark current photodetector

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257189, 257459, 257466, H01L 2906, H01L 3100, H01L 310328, H01L 310336

Patent

active

058804820

ABSTRACT:
A low dark current metal-semiconductor-metal photodetector has an active region for receiving photons and generating charge carriers in the form of holes and electrons in response to the photons and an isolation region for allowing electrical coupling to occur without increasing the dark current. The photodetector is a III-V ternary semiconductor having its active region defined by a via through a dielectric layer. A pair of electrodes has contact portions extending into contact with the active region and terminating on the isolation region. One electrode of the pair provides a high Schottky barrier to holes. The other electrode provides a high Schottky barrier for electrons

REFERENCES:
patent: 4998154 (1991-03-01), Surridge et al.
patent: 5208821 (1993-05-01), Berger et al.
patent: 5212395 (1993-05-01), Berger et al.
patent: 5225696 (1993-07-01), Bahraman
patent: 5512763 (1996-04-01), Allam
Walter A. Wohlmuth, Patrick Fay, Ilesanmi Adesida and Catherine Caneau, "Low Dark Current, Long Wavelength Metal-Semiconductor Metal Photodetectors," Abstract. Eighth International Conference on Indium Phosphide and Related Materials, Schwabisch-gmund, Germany, Apr. 1996.
Walter A. Wohlmuth, Patrick Fay, Catherine Caneau and Ilesanmi Adesida, "Low Dark Current, Long Wavelength Metal-Semiconductor Metal Photodetectors," Electronics Letters, vol. 32, No. 3, pp. 249-250, Feb. 1, 1996.
Walter A. Wohlmuth, Patrick Fay and Ilesanmi Adesida, "Dark Current Suppression in GaAs Metal-Semiconductor-Metal Photodetectors," IEEE Photonics Technology Letters, vol. 8, No. 8, pp. 1061-1063, Aug. 1996,
H.S. Fresser, F.E. Prins and D. P. Kern, "Low-Energy Electron Detection in Microcolumns," J. Vac. Sci. Technology, B, vol. 13, No. 6, published Nov./Dec. 1995, pp. 2553-2555.
Wei Gao, et al., "In.sub.0.53 Ga.sub.0.47 As Metal-Semiconductor-Metal Photodiodes With Transparent Cadmium Tin Oxide Schottky Contacts," Appl. Phys. Lett., vol. 65, No. 15, pp. 1930-1932, Oct. 10, 1994.
Paul R. Berger, et al., "In.sub.0.53 Ga.sub.0.47 As P-I-N Photodiodes With Transparent Cadmium Tin Oxide Contacts,"Appl. Phys. Lett., vol. 61, No. 14, pp. 1673-1675, Oct. 5, 1992.
Wei Gao, et al., "Transparent and Opaque Schottky Contacts On Undoped In.sub.0.52 Al.sub.0.48 As Grown By Molecular Beam Epitaxy," Appl. Phys. Lett., vol. 66, No. 25, pp. 3471-3473, Jun. 19, 1995.
Jong-Wook Seo, et al., "A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs With Indium-Tin-Oxide and Ti/Au Electrodes," IEEE Photonics Technology Letters, vol. 4, No. 8, pp. 888-890, Aug., 1992.
J. Lee Russell, et al., "Improved InP/InGaAs/InP Pin Detector Response Using A Transparent Conductor Contact," Electronics Letters, vol. 26, No. 16, pp. 1231-1232, Aug. 2, 1990.
W. A. Wohlmuth, et al., "InGaAs Metal-Semiconductor-Metal Photodetectors With Engineered Schottky Barrier Heights," Appl. Phys. Lett., vol. 69, No. 23, pp. 3578-3580, Dec. 2, 1996.
Walter A. Wohlmuth and Ilesanmi Adesida, "Long-Wavelength Metal-Semiconductor-Metal Photodetectors With Transparent and Opaque Electrodes," Society of Photo-Optical Instrumentation Engineers, vol. 2550, pp. 256-265, Jul., 1995.
Walter Wohlmuth, et al., "Engineering The Schottky Barrier Heights In InGaAs Metal-Semiconductor-Metal Photodetectors," Society of Photo-Optical Instrumentation Engineers, vol. 3006, pp. 52-60, Feb., 1997.
Walter Wohlmuth, et al., "InGaAs Metal-Semiconductor-Metal Photodetectors With A Hybrid Combination of Transparent And Opaque Electrodes," Applied Physics Letters, vol. 70, No. 23, to be published Jun. 2, 1997.
Walter A. Wohlmuth, et al., "Low Dark Current InAlAs/InGaAs Metal-Semiconductor-Metal Photodetectors," Proceedings of Eighth International Conference on Indium Phosphide and Related Materials, pp. 199-202, (1996). No month.
M. Porges, et al., "Asymmetric (Schottky-Ohmic) MSM Photodetector," Solid-State Electronics, vol. 38, No. 2, pp. 425-427 (1995). No month.
C. R. Crowell and V. L. Rideout, "Normalized Thermionic-Field (T-F) Emission in Metal-Semiconductor (Schottky) Barriers," Solid-State Electronics, vol. 12, pp. 89-105, Pergamon Press, 1969. No month.
M. Klingenstein and J. Kuhl, "Photocurrent Gain Mechanisms in Metal-Semiconductor-Metal Photodetectors," Solid-State Electronics, vol. 37, No. 2, pp. 333-340, (1994). No month.
K. L. Chopra, et al., "Transparent Conductors--A Status Review," Thin Solid Films--Electronics and Optics, vol. 102, pp. 1-46 (1983). No month.
S.M. Sze, et al., "Current Transport in Metal-Semiconductor-Metal (MSM) Structures," Solid-State Electronics, vol. 14, pp. 1209-1218, Pergamon Press (1971). No month.
Masanori Ito and Osamu Wada, "Low Dark Current GaAs Metal-Semiconductor-Metal (MSM) Photodiodes Using WSi.sub.x Contacts," IEEE Journal of Quantum Electronics, vol. QE-22, No. 7, pp. 1073-1077, Jul. 1986.
E. Sano, et al., "Performance Dependence of InGaAs MSM Photodetectors On Barrier-Enhancement Layer Structures," Electronics Letters, vol. 28, No. 13, pp. 1220-1221, Jun. 18, 1992.
Dennis L. Rogers, "Integrated Optical Receivers Using MSM Detectors," Journal of Lightwave Technology, vol. 9, No. 12, pp. 1635-1638, Dec., 1991.
John E. Bowers and Charles A. Burrus, Jr., "Ultrawide-Band Long-Wavelength P-I-N Photodetectors," Journal of Lightwave Technology, vol. LT-5, No. 10, pp. 1339-1350, Oct., 1987.
D. Kuhl, et al., "High-Speed Metal-Semiconductor-Metal Photodetectors on InP:Fe," IEEE Photonics Technology Letters, vol. 2, No. 8, pp. 574-576, Aug., 1990.
I. Adesida, et al., "Long Wavelength Metal-Semiconductor-Metal Photodetectors with Ti/Au and Indium-Tin-Oxide Electrodes," Indium Phosphide and Related Materials Conference Proceedings, pp. 284-287 (1994). No month.
Toshiki Ishida, et al., "Bias Dependence of Schottky Barrier Height in GaAs from Internal Photoemission and Current-Voltage Characteristics," J. Appl. Phys., vol. 74, No. 6, pp. 3977-3982, Sep. 15, 1993.
D. H. Lee, et al., "A Study of Surface Passivation on GaAs and In.sub.0.53 Ga.sub.0.47 As Schottky-Barrier Photodiodes Using SiO.sub.2, Si.sub.3 N.sub.4 and Polyimide," IEEE Transactions on Electron Devices, vol. 35, No. 10, pp. 1695-1696, Oct., 1988.
U. Schade, et al., "Improved Performance of Large-Area InP/InGaAs Metal-Semiconductor-Metal Photodetectors by Sulfur Passivation," Appl. Phys. Lett., vol. 64, No. 11, pp. 1389-1391, Mar. 14, 1994.
Winston K. Chan, et al., "High-Speed Ga.sub.0.47 In.sub.0.53 As MISIM Photodetectors With Dielectric-Assisted Schottky Barriers," IEEE Electron Device Letters, vol. 10, No. 9, pp. 417-419, Sep., 1989.
Jae H. Kim, et al., "High-Performance Back-Illuminated InGaAs/InAlAs MSM Photodetector With a Record Responsivity of 0.96 A/W," IEEE Photonics Technology Letters, vol. 4, No. 11, pp. 1241-1244, Nov., 1992.
A. Salvador, et al., "Resonant Cavity Enhanced InP/InGaAs Photodiode on Si Using Epitaxial Liftoff," Appl. Phys. Lett., vol. 65, No. 15, pp. 1880-1882, Oct. 10, 1994.
Julian B. D. Soole and Hermann Schumacher, "Transit-Time Limited Frequency Response of InGaAS MSM Photodetectors," IEEE Transactions on Electron Devices, vol. 37, No. 11, pp. 2285-2291, Nov., 1990.
Il Ki Han, et al., "Low Dark Current and High-Speed Metal-Semiconductor-Metal Photodetector on Sulfur-Treated InP," Jpn. J. Appl. Phys., vol. 33, Part 1, No. 12A, pp. 6454-6457, Dec. 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low dark current photodetector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low dark current photodetector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low dark current photodetector will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1323904

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.