Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-01-29
1999-03-09
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257189, 257459, 257466, H01L 2906, H01L 3100, H01L 310328, H01L 310336
Patent
active
058804820
ABSTRACT:
A low dark current metal-semiconductor-metal photodetector has an active region for receiving photons and generating charge carriers in the form of holes and electrons in response to the photons and an isolation region for allowing electrical coupling to occur without increasing the dark current. The photodetector is a III-V ternary semiconductor having its active region defined by a via through a dielectric layer. A pair of electrodes has contact portions extending into contact with the active region and terminating on the isolation region. One electrode of the pair provides a high Schottky barrier to holes. The other electrode provides a high Schottky barrier for electrons
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Adesida Ilesanmi
Arafa Mohamed
Fay Patrick
Wohlmuth Walter
Dutton Brian
The Board of Trustees of the University of Illinios
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