Low dark current photo-semiconductor device

Details Low dark current photo-semiconductor device Low dark current photo-semiconductor device

1979-01-26

1980-12-30

Edlow, Martin H.

357 15, 357 41, H01L 2714, H01L 2948

Patent

active

042426952

ABSTRACT:
A photo-semiconductor device includes an active region of semiconductor material in which carriers contributing to a photocurrent are generated by the irradiation of incident light. On one surface of the active region is formed a main junction towards which those carriers move. In the active region is buried an additional region to form at the interface between the additional and active regions an additional junction which attracts a substantial portion of thermally generated carriers. The remaining portion of the thermally generated carriers is partially recombined internally and partially attracted to the main junction. Thus, dark current is reduced.

REFERENCES:
patent: 3534231 (1970-10-01), Biard
patent: 3964083 (1976-06-01), Lohstroh
patent: 4087833 (1978-05-01), Tseng

Affiliated with

Also associated with

Rating

Low dark current photo-semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low dark current photo-semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low dark current photo-semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-10227