Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2009-07-29
2009-12-29
Carrillo, Sharidan (Department: 1792)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001000, C134S001100, C134S001300, C134S002000, C134S031000, C134S034000, C134S035000, C134S036000, C134S042000, C134S902000, C216S067000, C438S706000, C438S710000, C438S711000, C438S725000
Reexamination Certificate
active
07637269
ABSTRACT:
A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.
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Chu Chong Hwan
Feurprier Yannick
Nishino Masaru
Zin Kelvin
Carrillo Sharidan
Tokyo Electron Limited
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