Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...
Patent
1992-12-07
1993-11-23
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Contacts or leads including fusible link means or noise...
257529, 257530, 257755, H01L 2940, H01L 2348, H01L 2702, H01L 2954
Patent
active
052647250
ABSTRACT:
A submicron-width fuse element is disclosed that protects peripheral DRAM chip devices from low current failures below the range of metal fuse elements. In a specific application, the fuse elements are used to protect a DRAM chip from dielectric failure of voltage supply filtering capacitors. A low cross-section and length allows minimum space for the element.
REFERENCES:
patent: 4210875 (1980-07-01), Beasom
patent: 4413272 (1983-11-01), Mochizuki et al.
patent: 4518981 (1985-05-01), Schlupp
patent: 4598462 (1986-07-01), Chandreskhar
patent: 4647340 (1987-03-01), Szluk et al.
patent: 4796075 (1989-01-01), Whitten
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4935801 (1990-06-01), McClure et al.
patent: 5018532 (1991-05-01), Kaya
patent: 5059555 (1991-10-01), Iranmanesh et al.
Beigel Kurt D.
Mullarkey Patrick J.
Arroyo T. M.
James Andrew J.
Micron Semiconductor Inc.
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