Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2011-07-12
2011-07-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S218000, C257S364000, C257S523000, C257SE29152, C438S141000, C438S354000, C438S478000
Reexamination Certificate
active
07977705
ABSTRACT:
In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates.
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Mazure Carlos
Nguyen Bich-Yen
Pert Evan
S.O.I.Tec Silicon on Insulator Technologies
Wilson Scott
Winston & Strawn LLP
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