Low cost reduced blooming device and method for making the same

Details Low cost reduced blooming device and method for making the same Low cost reduced blooming device and method for making the same

1982-01-19

1982-11-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 31, 357 91, 427 431, H01L 2714, H01L 21263

Patent

active

043583237

ABSTRACT:
An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

REFERENCES:
patent: 3676727 (1972-07-01), Dalton et al.
patent: 3810796 (1974-05-01), Skaggs et al.
patent: 3888701 (1975-06-01), Tarneja et al.
patent: 3895430 (1975-07-01), Wilson et al.
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4228446 (1980-10-01), Kramer
patent: 4232245 (1980-11-01), Savoye et al.
"High Light Level Blooming in Silicon Vidicons", E. C. Douglas, IEEE Trans. on Electron Devices, vol. ED-22, pp. 224-234, May, 1975.
"Theory, Design, and Performance of Low-Blooming Silicon Diode Array Imaging Targets", B. M. Singer et al., IEEE Trans. on Electron Devices, vol. ED-21, pp. 84-89, Jan., 1974.

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