Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-07-28
2009-06-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S707000, C257SE23079, C257SE23103
Reexamination Certificate
active
07545033
ABSTRACT:
A power module for low voltage applications, which does not include an insulated metal substrate is disclosed. The module includes a power shell and a plurality of lead frames each lead frame including a conductive pad on which one or more MOSFETs may be electrically mounted. The MOSFETs are electrically connected via wire bonds.
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Cancellation Proceedings for Decision of Appeal on May 2, 2006 for Appeal Case No. 2004-1932—Japanese Application No. 2001-005156.
International Rectifier Corporation
Ngo Ngan
Ostrolenk Faber Gerb & Soffen, LLP
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