Low cost power MOSFET with current monitoring

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

Reexamination Certificate

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Details

C257S723000, C257S778000, C257S048000, C257SE25013

Reexamination Certificate

active

07122882

ABSTRACT:
A semiconductor integrated circuit package having a common source current sensing circuit includes a main die having an integrated circuit, the main die including a source bonding pad and a gate bonding pad disposed on an upper surface, a leadframe having a leadframe pad disposed under the main die, and a monitoring die including a source bonding pad and a gate bonding pad disposed on an upper surface, the monitoring die being coupled to the main die in such manner that the main die source bonding pad is coupled to the monitoring die source bonding pad and the main die gate bonding pad is coupled to the monitoring die gate bonding pad and such that the main die and monitoring die upper surfaces are adjacent to one another.

REFERENCES:
patent: 5422593 (1995-06-01), Fujihira
patent: 6392859 (2002-05-01), Ohshima
patent: 6933593 (2005-08-01), Fissore et al.

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