Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2007-02-27
2007-02-27
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C438S106000
Reexamination Certificate
active
09946749
ABSTRACT:
A low cost microelectronic circuit package includes a single build up metallization layer above a microelectronic die. At least one die is fixed within a package core using, for example, an encapsulation material. A single metallization layer is then built up over the die/core assembly. The metallization layer includes a number of landing pads having a pitch that allows the microelectronic device to be directly mounted to an external circuit board. In one embodiment, the metallization layer includes a number of signal landing pads within a peripheral region of the layer and at least one power landing pad and one ground landing pad toward a central region of the layer.
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Braunisch Henning
Cuendet John S.
Dory Thomas S.
Tang John
Towle Steven
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Vu David
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