Low cost InGaAIN based lasers

Details Low cost InGaAIN based lasers Low cost InGaAIN based lasers

2008-07-10

2010-11-09

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S049010, C257S022000, C257S615000

Reexamination Certificate

active

07830939

ABSTRACT:
A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lcand width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length lsand width bsof the chip can be selected as convenient values equal to or longer than the waveguide length lcand mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YDis larger than 50%.

REFERENCES:
patent: 6611544 (2003-08-01), Jiang et al.
patent: 2002/0013925 (2002-01-01), Senshu
patent: 2003/0136957 (2003-07-01), Tsuda et al.
patent: 2004/0245535 (2004-12-01), D'Evelyn et al.
patent: 2006/0038166 (2006-02-01), Tsuda et al.

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