Low cost, high volume silicon purification process

Details Low cost, high volume silicon purification process Low cost, high volume silicon purification process

1976-07-21

1978-01-24

Stern, Edward

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423341, C01B 3302, C01B 3308

Patent

active

040704440

ABSTRACT:
Truly amorphous silicon having a low level of undesired impurities, and therefore suitable for semiconductor applications, may be prepared by the present process. Impure silicon, for example, metallurgical grade silicon, is prepared at an elevated temperature, e.g., above 1400.degree. C. The impure silicon and at least one binary silicon fluoride compound, e.g., silicon tetrafluoride, are chemically combined at the elevated temperature to form silicon difluoride gas. The silicon difluoride gas is polymerized. The silicon difluoride polymer is then thermally decomposed to produce the purified, amorphous silicon and binary silicon fluoride by-products. The binary silicon fluorides are recycled in the process to be chemically combined with the impure silicon. That step and the succeeding steps serve to reduce the level of unwanted impurities in the silicon produced by at least several orders of magnitude.

REFERENCES:
patent: 2840588 (1958-06-01), Pease
J. W. Mellor's "A Comprehensive Treatise on Inorganic and Theo. Chem.," vol. 2, 1922 Ed., p. 66, Longmans, Green & Co., N.Y.

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