Low contamination RF sputter deposition apparatus

Details Low contamination RF sputter deposition apparatus Low contamination RF sputter deposition apparatus

1987-12-01

1989-04-04

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20419232, C23C 1434

Patent

active

048183598

ABSTRACT:
A high rate, low contamination, non-reactive sputter etching or deposition apparatus is disclosed herein. The apparatus is comprised of a pair of parallel plate electrodes, cathode and substrate and an additional or wall electrode means surrounding said other electrode means. The wall electrode can be made to be coplanar with said other electrodes and the area of said electrodes are designed so that the wall electrode is resputtered eliminating contamination. The electrodes are housed in a vacuum chamber with inlet means for introducing a non-reactive gas into said chamber. Means are provided for supplying said RF voltage to said electrodes both in and out of phase and for varying the magnitude of the substrate electrode RF voltage with respect to the magnitude of the cathode voltage. Thick insulator rings are used to reduce stray capacitance between the wall electrode and ground whereby the outer chamber (normally grounded) forms a low inductance path between the cathode electrode and acts as a shield for the inner chamber RF potential.

REFERENCES:
patent: 3617459 (1971-11-01), Logan
patent: 4131533 (1978-12-01), Bialko et al.
patent: 4362611 (1982-12-01), Logan et al.
patent: 4464223 (1984-08-01), Gorin
patent: 4521286 (1985-06-01), Hortwitz
patent: 4626312 (1986-12-01), Tracy
patent: 4637853 (1987-01-01), Bumble et al.

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