Low contamination, low energy beamline architecture for high...

Details Low contamination, low energy beamline architecture for high... Low contamination, low energy beamline architecture for high...

2011-08-09

2011-08-09

Johnston, Phillip A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S3960ML, C250S397000, C250S398000, C250S492200, C250S492300

Reexamination Certificate

active

07994488

ABSTRACT:
An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

REFERENCES:
patent: 5091645 (1992-02-01), Elliott
patent: 5481116 (1996-01-01), Glavish et al.
patent: 5780863 (1998-07-01), Benveniste et al.
patent: 6111260 (2000-08-01), Dawson et al.
patent: 6231054 (2001-05-01), Allen, Jr. et al.
patent: 6437350 (2002-08-01), Olson et al.
patent: 6441382 (2002-08-01), Huang
patent: 6635880 (2003-10-01), Renau
patent: 6710358 (2004-03-01), Chen et al.
patent: 6777695 (2004-08-01), Viviani
patent: 6777696 (2004-08-01), Rathmell et al.
patent: 6946667 (2005-09-01), Chen et al.
patent: 6998625 (2006-02-01), McKenna et al.
patent: 7135691 (2006-11-01), Vanderpot et al.
patent: 7351987 (2008-04-01), Kabasawa et al.
patent: 2002/0066872 (2002-06-01), Nishihashi et al.
patent: 2003/0066976 (2003-04-01), Chen et al.
patent: 2004/0227074 (2004-11-01), Benveniste et al.
patent: 2005/0230643 (2005-10-01), Vanderpot et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
patent: 2006/0145095 (2006-07-01), Olson et al.
patent: 2006/0219955 (2006-10-01), Ray
patent: 2006/0284117 (2006-12-01), Vanderpot et al.
patent: 2007/0114455 (2007-05-01), Naito et al.
patent: 2008/0258074 (2008-10-01), Tsukihara et al.
patent: 2009/0261248 (2009-10-01), Glavish et al.

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