Low-contamination AlN crucible for monocrystal pulling and metho

Details Low-contamination AlN crucible for monocrystal pulling and metho Low-contamination AlN crucible for monocrystal pulling and metho

1983-12-20

1985-05-28

McCarthy, Helen M.

Plastic and nonmetallic article shaping or treating: processes

Pore forming in situ

By mechanically introducing gas into material

156DIG83, 264 65, 264 66, 264 67, 422249, 501 96, 501 98, 501152, C04B 3558, C30B 1510, C30B 3500

Patent

active

045199663

ABSTRACT:
A low contamination crucible for pulling monocrystals of Group III and Group V elements of the Periodic Table, comprising particularly aluminum nitride with an additive of boron nitride or a rare earth oxide. The additive concentration is up to 5% by weight, but preferably 0.5% to 3% by weight. The hardness of the crucible of the invention is 300 to 400% greater than that of undoped material subjected to the same sintering conditions.

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Komeya, K. et al., "Effect of Various Additives on Sintering of Aluminum Nitride", Yogyo-Kyokai-Shi, 89(1981), pp. 330-334, (Eng. transl'n).
Long, G. et al., "Aluminum Nitride Containers for the Synthesis of GaAs-J. of Electrochem. Soc. 109, (1962), pp. 1176-1179.
Ryatsev, K. et al., "Effect of Some Additives on the Fritting and Micro-Structure on Aluminum Nitride Ceramics"-Chem. Abstr., vol. 95, 11386t.
Chem. Abstracts, vol. 99, (Jul. 25, 1983), p. 274, Abstr. #26975r.

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