Low-contaminate work surface for processing semiconductor grade

Details Low-contaminate work surface for processing semiconductor grade Low-contaminate work surface for processing semiconductor grade

1991-01-25

1992-06-23

Kisliuk, Bruce M.

Work holders

With catch pan

269 43, 269 17, 269 71, 269258, 269289R, 269286, B23Q 300

Patent

active

051236362

ABSTRACT:
The present invention is a low-contaminate work surface for processing semiconductor grade silicon. The work surface is comprised of a parallel array of silicon elements forming a planar surface. The silicon elements are of comparable purity with the semiconductor grade silicon to be process, thus minimizing contact contamination. In an additional embodiment of the present invention, the low-contaminate work surface is part of a work station which provides for initial screening and sizing of the semiconductor grade silicon being processed.

REFERENCES:
patent: 880948 (1908-03-01), Wilhelm et al.
patent: 2811186 (1957-10-01), Honza
patent: 4473455 (1984-09-01), Dean et al.
patent: 4857173 (1989-08-01), Belk
Materials and Processes in Manufacturing by E. Paul DeGarmo, 1979, p. 169.

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