Low contact resistance process

Details Low contact resistance process Low contact resistance process

1990-12-14

1992-11-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437187, 437197, 437199, 437957, 437245, 437247, 437248, H01L 2144

Patent

active

051660954

ABSTRACT:
A process to reduce M1/N+ contact resistance includes a low temperature anneal step, after the aluminum interconnect is alloyed at 400.degree. C. During the low temperature anneal step, the temperature of the furnace tube is lowered from 400.degree. C. to 250.degree. C. over a period of two hours, after which the integrated circuit is annealed under nitrogen for a further period of one hour. Alternately, the low temperature anneal is performed in an oven filled with nitrogen for a period of two hours at 250.degree. C.

REFERENCES:
patent: 4525221 (1985-06-01), Wu
patent: 4968644 (1990-11-01), Gallagher et al.
patent: 5019533 (1991-05-01), Cuddihy et al.
"Semiconductor Contacting with Aluminum", Hagmann, IBM Technical Disclosure Bulletin, vol. 13, No. 10, Mar. 1979; pp. 2911.

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