Low coercivity iron-silicon material, shields, and process

Details Low coercivity iron-silicon material, shields, and process Low coercivity iron-silicon material, shields, and process

1976-02-26

1977-09-20

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

252 6255, 360126, 428433, 428630, 428631, 428928, 29603, 148 3155, C23C 1500

Patent

active

040495221

ABSTRACT:
Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250.degree. C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in.sup.2.

REFERENCES:
patent: 3271718 (1966-09-01), Shaw
patent: 3670278 (1972-06-01), Foster et al.
I. Pockrand et al., "Magnetic Domains in Thin Sputtered FeSi Films," Phys. Stat. Sol. (a) 27, 413 (1975).
H. Hieber, "On the Electron Microprobe Analysis of Structured Magnetic Thin Films," Thin Solid Films, 12, 29-34 (1972).

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