Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-03-11
2008-03-11
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23174, C438S637000, C438S667000, C438S672000, C438S675000
Reexamination Certificate
active
10980168
ABSTRACT:
A build-up layer packaging comprising a first ceramic substrate, a second ceramic substrate, and a circuit layer is provided. The first ceramic substrate has a through hole to dispose a die therein. The second ceramic substrate, attached to a common lower surface of the ceramic substrate and the die, further has a plurality of openings to expose the pads of the die. The openings are filled with plugs electrically connecting to the pads. The circuit layer is formed under the second ceramic substrate to transmit signals generated by the die outward.
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Ho Kwun-Yao
Kung Moriss
Birch & Stewart Kolasch & Birch, LLP
Thai Luan
Via Technologies Inc.
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