Low-capacity vertical diode

Details Low-capacity vertical diode Low-capacity vertical diode

2005-08-02

2005-08-02

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S458000, C257S257000, C438S048000, C438S186000

Reexamination Certificate

active

06924546

ABSTRACT:
The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate (1), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer (3) doped with a type of conductivity opposite to that of the substrate, the upper surface of the semiconductor layer bearing a first solder bump (23). The diode comprises a second zone including on the substrate a thick strip conductor (16) bearing at least second solder bumps (24), said first and second solder bumps defining a plane parallel to the substrate plane.

REFERENCES:
patent: 4811080 (1989-03-01), Richards
patent: 6251501 (2001-06-01), Higdon et al.
patent: 6303979 (2001-10-01), Kasahara
patent: 2004/0095205 (2004-05-01), Schaffner et al.
patent: 2 559 959 (1985-08-01), None

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