Low capacitance two-terminal barrier controlled TVS diodes

Details Low capacitance two-terminal barrier controlled TVS diodes Low capacitance two-terminal barrier controlled TVS diodes

2007-07-17

2009-06-09

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Reexamination Certificate

active

07544544

ABSTRACT:
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

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