Low capacitance two-terminal barrier controlled TVS diodes

Details Low capacitance two-terminal barrier controlled TVS diodes Low capacitance two-terminal barrier controlled TVS diodes

2007-07-17

2007-07-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000

Reexamination Certificate

active

11020507

ABSTRACT:
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

REFERENCES:
patent: 4037245 (1977-07-01), Ferro
patent: 4375124 (1983-03-01), Cogan
patent: 4405932 (1983-09-01), Ishii et al.
patent: 4476622 (1984-10-01), Cogan
patent: 4641174 (1987-02-01), Baliga
patent: 4692780 (1987-09-01), Bencuya et al.
patent: 4751556 (1988-06-01), Cogan et al.
patent: 4845051 (1989-07-01), Cogan et al.
patent: 5150271 (1992-09-01), Unterweger et al.
patent: 5321283 (1994-06-01), Cogan et al.
patent: 5387805 (1995-02-01), Metzler et al.
patent: 5426323 (1995-06-01), Reczek et al.
patent: 5648664 (1997-07-01), Rough et al.
patent: 5880511 (1999-03-01), Yu et al.
patent: 6015999 (2000-01-01), Yu et al.
patent: 6239958 (2001-05-01), Kato et al.
patent: 6392266 (2002-05-01), Robb et al.
patent: 6489660 (2002-12-01), Einthoven et al.
patent: 6597052 (2003-07-01), Hurkx et al.
patent: 6600204 (2003-07-01), Einthoven et al.
patent: 6602769 (2003-08-01), Einthoven et al.
patent: 2006/0131605 (2006-06-01), Cogan et al.
“High Performance Microwave Static Induction Transistors”, A. Cogan et al., Proc. International Electronic Devices Meeting (IDEM '83), IEEE, pp. 221-224, Dec. 1983.
“Progress Toward the Ultimate Power Semiconductor Switch”, Adrian I. Cogan et al., Powertechnics Magazine, pp. 35-39, Sep. 1986.
“The Bipolar Transistor is Dead, Long Live the Bipolar Transistor!”, Bruce Carsten, www.power-tech.com/cartext.htm, (presented in the proceedings of the PCIM conference, 1993).
“Silicon FETs Enter L-Band Power Applications”, Adrian I. Cogan et al., RF Design, pp. 40-45, Nov. 1993.
“SLVU2.8-8, EPD TVS Diode Array for ESD and Latch-up Protection”, Semtech Corporation, http://semtech.com/pc/downloadDocument.do?navid=HO,C157, C158,P1482&id=449, revision Dec. 8, 2004.

Affiliated with

Also associated with

Rating

Low capacitance two-terminal barrier controlled TVS diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low capacitance two-terminal barrier controlled TVS diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low capacitance two-terminal barrier controlled TVS diodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3720575