Low capacitance silicon transient suppressor with monolithic str

Details Low capacitance silicon transient suppressor with monolithic str Low capacitance silicon transient suppressor with monolithic str

1992-02-18

1993-09-14

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

Plural diodes in same non-isolated structure, or device...

257603, 257723, H01L 2332, H01L 2990, H01L 2702, H01L 2316

Patent

active

052454126

ABSTRACT:
A semiconductor device for suppressing transient voltages is adapted for use on high frequency data lines. The semiconductor device combines an avalanche type diode which has high capacitance in series with a rectifying diode which has a capacitance three magnitudes lower. The resultant semiconductor device is fabricated using a single, monolithic silicon die instead of stacking two separate dies as has been done in prior art transient voltage suppressors to achieve the same characteristics. The semiconductor die is adaptable for packaging in surface mountable DIP packages and other common circuit board mountable packages.

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