Low capacitance semiconductor device

Details Low capacitance semiconductor device Low capacitance semiconductor device

2011-05-17

2011-05-17

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S579000, C257S355000, C257SE29222

Reexamination Certificate

active

07943959

ABSTRACT:
A surge protection device with small-area buried regions (38, 60) to minimize the device capacitance. The doped regions (38, 60) are formed either in a semiconductor substrate (34), or in an epitaxial layer (82), and then an epitaxial layer (40, 84) is formed thereover to bury the doped regions (38, 60). The small features of the buried regions (38, 60) are maintained as such by minimizing high temperature and long duration processing of the chip. An emitter (42, 86) is formed in the epitaxial layer (40, 84).

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