Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2005-10-11
2010-06-01
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S107000, C257SE29113
Reexamination Certificate
active
07728349
ABSTRACT:
A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element. A first well region of a first conductivity type formed within a semiconductor body. A first region of the first conductivity type is formed within the first well region. A second region of a second conductivity type is formed with the first well region. A second well region having the second conductivity type is formed within the semiconductor body adjacent the first well region. A third region of the first conductivity type is formed within the second well region. A fourth region of the second conductivity type is formed within the second well region. The trigger element is connected to the first region and alters a base trigger voltage and a base holding voltage into an altered trigger voltage and an altered holding voltage. A first terminal or pad is connected to the second region. A second terminal is connected to the third region, the fourth region, and the trigger element. In operation, the first terminal conducts current to the second terminal during a low impedance state in response to the altered trigger voltage being applied to the first terminal.
REFERENCES:
patent: 5012317 (1991-04-01), Rountre
patent: 5307462 (1994-04-01), Hastings
patent: 5734543 (1998-03-01), Turner
patent: 5856214 (1999-01-01), Yu
patent: 6016002 (2000-01-01), Chen et al.
patent: 6764892 (2004-07-01), Kunz et al.
patent: 6822294 (2004-11-01), Vashchenko et al.
patent: 6876957 (2005-04-01), Stewart
patent: 6909149 (2005-06-01), Russ et al.
patent: 6911679 (2005-06-01), Vashchenko et al.
patent: 6919604 (2005-07-01), Lai et al.
patent: 7064393 (2006-06-01), Mergens et al.
patent: 2002/0053704 (2002-05-01), Avery et al.
patent: 2003/0218841 (2003-11-01), Kodama
patent: 2004/0136127 (2004-07-01), Kodama et al.
patent: 2004/0201033 (2004-10-01), Russ et al.
patent: 2004/0217425 (2004-11-01), Brodsky et al.
Jang et al. “Novel diode-chain triggering SCR circuits for ESD protection.” Solid-State Electronics, 44 (2000) 1297-1303.
Mergens et al. “Advanced SCR ESD Protection Circuits for CMOS/SOI Nanotechnologies.” Presented Paper at CICC Custom Integrated Circuits Conference, San Jose, CA (Sep. 18-21, 2005).
“Diode-Triggered SCR (DTSCR) for RF-ESD Protection of BiCMOS SiGe HBTs and CMOS Ultra-Thin Gate Oxides”, Markus P.J. Mergens, Christian C. Russ, Koes G. Verhaege, John Armer, Phillip C. Jozwiak, Russ Mohn, Bart Keppens, and Con Son Trinh, IEEE, Dec. 2003 pp. 21.3.1-21.3.4.
“ESD: A Pervasive Reliability Concern for IC Technologies”, Charkava Duvvury and Ajith Amerasekera, IEEE, May 1993, pp. 690-702.
Brady III Wade J.
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilson Allan R.
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