Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2010-01-07
2011-12-06
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S381000, C257S379000, C257S516000, C257S571000, C257SE21004
Reexamination Certificate
active
08071457
ABSTRACT:
A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.
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patent: 5543351 (1996-08-01), Hirai et al.
patent: 6746910 (2004-06-01), Hsu et al.
patent: 7375000 (2008-05-01), Nowak et al.
Jaeger, “Intro to Microelectronic Fabrication, vol. V, 2nd ed”, 2002, Prentice Hall, pp. 82-84.
Chang Leonard
Ditthavong Mori & Steiner, P.C.
Garber Charles
GLOBALFOUNDRIES Inc.
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