Low capacitance precision resistor

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

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C438S381000, C257S379000, C257S516000, C257S571000, C257SE21004

Reexamination Certificate

active

08071457

ABSTRACT:
A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.

REFERENCES:
patent: 3359462 (1967-12-01), Schutze et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 4497685 (1985-02-01), Soclof
patent: 5543351 (1996-08-01), Hirai et al.
patent: 6746910 (2004-06-01), Hsu et al.
patent: 7375000 (2008-05-01), Nowak et al.
Jaeger, “Intro to Microelectronic Fabrication, vol. V, 2nd ed”, 2002, Prentice Hall, pp. 82-84.

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