Low capacitance power resistor using beryllia dielectric heat si

Details Low capacitance power resistor using beryllia dielectric heat si Low capacitance power resistor using beryllia dielectric heat si

1986-04-03

1988-01-12

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element and base formed in layers

H01C 1012

Patent

active

047194430

ABSTRACT:
A thin alumina support substrate is printed with a resistive thick film and trimmed to the desired resistance value so as to avoid undue toxicity during the trimming process. The thus formed thick film resistor on an alumina substrate is then solder-bonded to a relatively thick beryllia (BeO) dielectric heat sink which, in the exemplary embodiment, is in turn also solder-bonded on its opposite side to a larger metallic heat sink.

REFERENCES:
patent: 3315200 (1967-04-01), Hannay
patent: 3478191 (1969-11-01), Johnson et al.
patent: 3481306 (1969-12-01), O'Connell et al.
patent: 3486221 (1969-12-01), Robinson
patent: 3515850 (1970-06-01), Cady, Jr.
patent: 4103275 (1978-07-01), Diehl et al.
patent: 4288776 (1981-09-01), Holmes
patent: 4358748 (1982-11-01), Gruner et al.

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