Low capacitance over-voltage protection thyristor device

Details Low capacitance over-voltage protection thyristor device Low capacitance over-voltage protection thyristor device

2011-06-28

2011-06-28

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S112000, C257S119000, C257S130000, C257S157000, C257SE21515, C257SE23187

Reexamination Certificate

active

07968907

ABSTRACT:
An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.

REFERENCES:
patent: 3727116 (1973-04-01), Thomas et al.
patent: 4402004 (1983-08-01), Iwasaki
patent: 6862162 (2005-03-01), Casey
patent: 2002/0134991 (2002-09-01), Casey et al.

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