Low capacitance interconnection

Details Low capacitance interconnection Low capacitance interconnection

1995-11-30

1999-05-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257758, H01L 2900

Patent

active

059006684

ABSTRACT:
A semiconductor device having reduced parasitic capacitance and, consequentially increased integrated circuit speed, is achieved by removing sections of dielectric interlayers which do not support conductive patterns, as by anisotropic etching, to form air gaps which can remain or are filled in with a dielectric material having a low dielectric constant. In another embodiment, a conformal dielectric coating is deposited, having a low dielectric constant.

REFERENCES:
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5598028 (1997-01-01), Losavio et al.
patent: 5612914 (1997-03-01), Liu et al.
patent: 5654570 (1997-08-01), Agnello
patent: 5708303 (1998-01-01), Jeng

Affiliated with

Also associated with

Rating

Low capacitance interconnection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low capacitance interconnection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low capacitance interconnection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1871295